Nambari ya Bidhaa ya Mtengenezaji:
TSM170N06PQ56 RLG
Product Overview
Mtengenezaji:
Taiwan Semiconductor Corporation
Nambari ya Kipande:
TSM170N06PQ56 RLG-DG
Maelezo:
MOSFET N-CH 60V 44A 8PDFN
Maelezo ya Kina:
N-Channel 60 V 44A (Tc) 73.5W (Tc) Surface Mount 8-PDFN (5x6)
Hesabu:
13281 Pcs Mpya Halisi Katika Hifadhi
12897537
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
95pK
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
TSM170N06PQ56 RLG Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Taiwan Semiconductor
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
60 V
Sasa - Drain inayoendelea (id) @ 25 ° C
44A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Malipo ya lango (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
1556 pF @ 30 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
73.5W (Tc)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
8-PDFN (5x6)
Kifurushi / Kesi
8-PowerTDFN
Nambari ya Bidhaa ya Msingi
TSM170
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
2,500
Majina mengine
TSM170N06PQ56 RLGTR
TSM170N06PQ56RLGTR
TSM170N06PQ56 RLGDKR-DG
TSM170N06PQ56RLGCT
TSM170N06PQ56 RLGTR-DG
TSM170N06PQ56RLGDKR
TSM170N06PQ56 RLGCT-DG
TSM170N06PQ56 RLGDKR
TSM170N06PQ56 RLGCT
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
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MOSFET N-CHANNEL 600V 4A TO252
